Bio: Dimitri A. Antoniadis, a native of Greece, received his B.S. in Physics from the National University of Athens in 1970, and his Ph.D. in Electrical Engineering in 1976 from Stanford University and in 1978 he joined MIT where he was founding Director of the Microsystems Technology Laboratories from 1983 to 1990. His early work on sub-100-nm Si MOSFETs and his experimental studies of highly nonuniform channel doping and SOI transistors have contributed to the groundwork for today’s high performance silicon MOSFETs. His recent research is in the areas of technology and modeling of high-carrier-mobility/high-carrier velocity nanoscale MOSFETs in Si, Ge, III-V and non-conventional materials. He is a member of the National Academy of Engineering and the American Academy of Arts and Sciences, a Life-Fellow of the IEEE, and the recipient of several professional awards.
Event Contact: Eliese Lissner | el3001@columbia.edu