Speaker: Prof. Ullrich Pfeiffer, Bergische Universität Wuppertal
The push for novel applications in the sub-mmWave region of the electromagnetic spectrum has raised the bar on RF circuit design and characterization. Continued device scaling enables circuits to operate at frequencies so high that contact-less wafer testing (in free space) is the last resort. This talk will summarize this frontier. It follows practical CMOS and SiGe BiCMOS design examples including 0.5 THz high-power oscillators, sub-harmonically operated receivers and transmitters up to 0.8 THz, and broadband direct detectors for active imagers running well beyond 1 THz.
Ullrich Pfeiffer received the Ph.D. in physics from the University of Heidelberg, Germany, in 1999. Till 2006 he was with the IBM T.J. Watson Research Center where his research involved RF circuit design and packaging for 60GHz communication. Since 2008 he holds the High-frequency and Communication Technology chair at the University of Wuppertal, Germany. His current research activities include the design of silicon integrated circuits for THz imaging applications. Among other awards, he is the recipient of the 2007 European Young Investigator Award, the co-recipient of the 2004 and 2006 Lewis Winner Award, as well as the 2012 Jan Van Vessem Award at the ISSCC Conference. He is a Senior Member of IEEE, has authored and co-authored 100+ publications and has been the co-inventor of 10+ US and international issued patents, relating to RF, millimeter-wave, terahertz communication/imaging circuits and sensors.