Past Event

Past, Present and Future of High-Performance-Logic Transistor Technology

November 19, 2019
2:00 PM - 3:00 PM

Date: November 19, 2019
Time: 2:00pm
Location: Davis Auditorium
Speaker: Professor Dimitri A. Antoniadis
Faculty Host: Professor Debasis Mitra

Abstract: In this presentation I will first discuss the basic principles and the consequences of the so-called Moore’s and Dennard’s scaling laws of high performance integrated circuits with focus on the practical aspects of scaling of the MOSFET devices that constitute the core of logic electronics. While area scaling in the earlier days of integrated circuits led to commensurate area and clock-delay decrease, in the later years the rising powerdensity forced the incorporation of additional device performance boosters, such as channel strain. However, increasingly complicated device structures, such as 3-D channel geometries adopted in order to mitigate the deteriorating electrostatic integrity of transistors in the latest CMOS generations, have led to decreasing device performance making overall IC performance generation-to-generation enhancement more difficult to achieve. I will discuss these historical trends and then I will assess selected research directions involving new materials and new device operating principles that are considered as candidates to supplement or replace traditional silicon MOSFETs.

Bio: Dimitri A. Antoniadis, a native of Greece, received his B.S. in Physics from the National University of Athens in 1970, and his Ph.D. in Electrical Engineering in 1976 from Stanford University and in 1978 he joined MIT where he was founding Director of the Microsystems Technology Laboratories from 1983 to 1990. His early work on sub-100-nm Si MOSFETs and his experimental studies of highly nonuniform channel doping and SOI transistors have contributed to the groundwork for today’s high performance silicon MOSFETs. His recent research is in the areas of technology and modeling of high-carrier-mobility/high-carrier velocity nanoscale MOSFETs in Si, Ge, III-V and non-conventional materials. He is a member of the National Academy of Engineering and the American Academy of Arts and Sciences, a Life-Fellow of the IEEE, and the recipient of several professional awards.

Event Contact: Eliese Lissner |