MOSFET degradation due to Hot Carrier Injection in finFETs: statistical variations and the effect of self-heating Device degradation, or aging, is a continuing concern for CMOS circuits, and estimating product lifetime demands a proper assessment of such degradation. Of the known degradation mechanisms, that due to channel hot carrier injection (HCI) is taking an increasingly prominent role in contemporary CMOS technologies. The seminar presents experiment studies of HCI degradation in modern finFETs, particular in regard to the effect of self-heating, which can impact lifetime projection, and on the change of the statistical distribution of FET parameters as they degrade, which can affect the design margins assumed by circuit designers.
Keith Jenkins was a Research Staff Member at the IBM Thomas J. Watson Research Center from 1983 to 2018. In this position, he did research in a variety of device and circuit subjects, including high frequency measurement techniques, electron beam circuit testing, radiation- device interactions, low temperature electronics, SOI technology, and substrate crosstalk in circuits. His most recent activities include designing circuits for analog on-chip self- measurement, evaluating the frequency response of nanoscale devices, studying the impact of self-heating in advanced CMOS technologies, and designing compact and efficient structures to measure circuit and device reliability. He has a PhD in physics from Columbia University, for experimental work in high energy physics.