Wen Wang is an eminent researcher in optoelectronic materials, devices, and molecular beam epitaxy. He focuses his research on creating knowledge that can be applied to real-world problems. His current projects include nano and heterostructure material properties, optoelectronic devices, infrared lasers, detectors, and photovoltaics.
He has contributed more than 300 papers and published extensively in this area, e.g. Type-II InAs/GaSb superlattices for mid- and long-wavelength applications (Quantum Structure Infrared Photodetectors International Conference, 2010, Istanbul, Turkey); High detectivity InGaAsSb photodetectors with cutoff wavelength up to 2.6 um (J. Crystal Growth, 2009); Interface and optical properties of InGaAsNSb quantum wells (very low threshold 1.3 um lasers, J. Vac. Sci. Tech. 2007); Mid-infrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers (J. Vac. Sci. Tech. 2007); Strain-compensated InGaAsSb quantum well lasers emitting at 2.43 um (environmental and glucose sensing, IEEE PTL, 2005); Invention of a new quinternary dilute nitride InGaAsSbN for mid-infrared optoelectronic devices (JAP 2003 and APL 2001); InAs/InP HBT microstructures for MMW (JVSTB 2013), growth of InSb nanostructures, Appl. Phys. Lett. 2016; InAs-based SLs, Quantum Structure Infrared Photodetectors Conference Stockholm, 2018.
He joined Columbia University in 1987. Between 1981 and 1982 he worked at the Rockwell Science Center, and between 1982 and 1987 he worked at the IBM T. J. Watson Research Center. During Fall 1986, he was a Visiting Associate Professor with the EECS Department at MIT. He received his PhD and master's degrees in electrical engineering at Cornell University, and a bachelor's degree in physics from the National Taiwan University. He has served on many technical review panels, including the New York State Science and Technology Foundation Center for Advanced Technology program on optoelectronics.
Wang is a fellow of the Institute of Electrical and Electronics Engineers, the American Physical Society, John Simon Guggenheim Foundation, and is an Electron Device Society distinguished lecturer.