Welcome to the page for integrator-based LDO!

Thanks to MOSIS and Columbia University, we taped out the chip in 180nm technology. The LDO is built using differential VCOs which convert voltages into frequency information. Due to integrator based architecture the LDO has higher efficiency, lower input voltage and better load regulation than traditional operational-amplifier based implementations.

The proposed LDO consumes a power of 3.7uW at 0.8V input and can achieve a drop-out voltage of 100mV and a load regulation of 8.8uV/mA.The proposed LDO is capacitor-free.

This is the photo of the die of the chip. It has VCO-integrator based LDO and a traditional LDO for comparison.

Fig. 1: Photo of the die

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