James Teherani joined Columbia University as an Assistant Professor in Electrical Engineering in 2015.

His research interests include emerging materials and devices (especially 2D transition metal dichalcogenides), strain engineering, high-mobility transistors, tunneling transistors (TFETs), and quantum device structures. Past work has included study of strained Si, strained Ge, strained SiGe, InAs, and GaSb material systems.

He received his PhD and SM in Electrical Engineering and Computer Science from MIT in 2015 and 2010, respectively. His PhD thesis, conducted under Prof. Judy L. Hoyt and Prof. Dimitri A. Antoniadis, studied the fundamental limits of switching abruptness of tunneling transistors (TFETs). He received a BS in Electrical and Computer Engineering from the University of Texas at Austin in 2008.