March 9, 2015
Speaker: James T. Teherani, Doctoral Candidate, Department of Electrical Engineering and Computer Science, MIT
Many new materials hold much promise to revolutionize the future. But often, promise is just that. To turn promise into progress, we need fundamental analysis of emerging materials to guide the design of future devices. In my research, I pair nano-device fabrication and measurement with quantum simulations to study fundamental properties of emerging materials and devices. In the talk, I will highlight my work on (1) the extraction of the valence band offset in the extremely strained Si/Ge heterostructure and (2) the analysis of the effective mass and ballistic velocity of asymmetrically strained-Ge nanowires. The methodology for understanding how strain couples to transport is suggested for use in the investigation of fundamental properties of 2D materials.
James T. Teherani is a PhD candidate in Electrical Engineering and Computer Science at the Massachusetts Institute of Technology (MIT) co-advised by Prof. Judy L. Hoyt and Prof. Dimitri A. Antoniadis. His research interests include emerging materials and devices (e.g. 2D transition metal dichalcogenides), strain engineering, high-mobility transistors, tunneling transistors (TFETs), and quantum device structures. His PhD thesis studies the fundamental limits of switching abruptness of tunneling transistors. Past work has included study of strained Si, strained Ge, InAs, and GaSb material systems. He received an MS from MIT in 2010 and BS in Electrical and Computer Engineering from the University of Texas at Austin in 2008. He expects to receive his PhD in Spring 2015.