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Wen Wang

Faculty Photo
Wen Wang
Professor
1320 S. W. Mudd, Mail Code: 4712

Phone: +1 212-854-1748
Email:

Office hours: Sabbatical


Professor Wen Wang's current research interests are in the areas ofultrahigh speed electronics, heterogeneous materials integration, andsemiconductor optoelectronics, including lasers and photodetectors.


He joined the Electrical Engineering Department in 1987 where he isThayer Lindsey Professor. Between 1981 and 1982 he worked at theRockwell Science Center and between 1982 and 1987 he worked at the IBMT. J. Watson Research Center.  During Fall 1986, he was a VisitingAssociate Professor with the EECS dept at MIT.  He has contributed some250 journal articles in the areas of heterostructure device physics,high speed transistors, semiconductor lasers, photodetectors, molecularbeam epitaxy, and surface science. He is a fellow of the IEEE, AmericanPhysical Society, John Simon Guggenheim Foundation, and a distinguished lecturer of the IEEE ElectronDevice Society. He received his Ph.D. and master's degrees inelectrical engineering at Cornell University, and the bachelor's degreein physics from the National Taiwan University.


Publications

"High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6 um", 15th International Conference on Molecular Beam Epitaxy, Vancouver, BC, Canada, Aug. 3–8, 2008; J. Crystal Growth, 311, 1893–1896 (2009).

"Mid-infrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers", J. Vac. Sci. & Tech. B, v 25, 1083 (2007)

"Molecular-beam epitaxy of phosphor-free 1.3um InAlGaAs multiple quantum well lasers on InP (100)", J. Vac. Sci. & Tech. B, v 25, 1090 (2007).

"InGaAsNSb/GaAs quantum wells for 1.55 um lasers grown bymolecular-beam epitaxy", Appl. Phys. Lett.  48, 7068 (2001).  Invention of the InGaAsNSb quinternary compound.

 Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L., "High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy", Appl. Phys. Lett. 76, 742 (2000).

 X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang, " Molecular beam epitaxial growth of InGaAsNSb/GaAs quantum wells for long-wavelength semiconductor lasers", Appl. Phys. Lett. Vol.75, No.2, 178 (1999).
Y. Zhao, M.J. Jurkovic, and W.I. Wang, "Characterization of AuGe and AuTe based ohmic contacts on InAs n-channel high electron mobility transistors", J. Electrochem. Soc. 14, 1067 (1997).

X. Li, J.L. Jimenez, M.J. Jurkovic, and W.I. Wang, "Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser, in Optoelectronic Integrated Circuits, Proc. SPIE 3006, pp. 126-133 (1997).

I.W. Tao and W.I. Wang, "Strained InGaAs quantum well lasers grown on (111) GaAs", Electron. Lett. 28, 705 (1992).

 

G. Brozak, B.V. Shanabrook, D. Gammon, D.A. Broido, R. Beresford, and W.I. Wang, "Intersubband transitions in piezoelectric superlattices", Surface Science 267, 120-123 (1992). 

E.E. Mendez, H. Ohno, L. Esaki, and W.I.Wang, "Resonant interband tunneling via Landau levels in polytype heterostructures", Phys. Rev. B43, 5196 (1991).

 

Band structure engineering for electron tunneling in heterostructures,                               Beresford, R.; Luo, L.; Wang, W.I.; IEEE Transactions on Electron Devices,                                      v 36, p 2618, Nov. 1989. 

L. F. Luo, R. Beresford, and W. I. Wang, "Interband tunneling in polytype InAs/GaSb/AlSb heterostructures" Appl. Phys. Lett. 55, 2023 (1989).

L. F. Luo, R. Beresford, and W. I. Wang, "Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructures" Appl. Phys. Lett. 53, 2320 (1988).