<-- Return to the previous page

Wen Wang

Faculty Photo
Wen Wang
Professor
1320 S. W. Mudd, Mail Code: 4712

Phone: +1 212-854-1748
Email:

Office hours: Thursday 4-5 pm


On Sabbatical Spring 2009 

Professor Wen Wang's current research interests are in the areas of ultrahigh speed electronics, heterogeneous materials integration, and semiconductor optoelectronics, including lasers and photodetectors.

He joined the Electrical Engineering Department in 1987 where he is Thayer Lindsey Professor. Between 1981 and 1982 he worked at the Rockwell Science Center and between 1982 and 1987 he worked at the IBM T. J. Watson Research Center.  During Fall 1986, he was a Visiting Associate Professor with the EECS dept at MIT.  He has contributed some 250 journal articles in the areas of heterostructure device physics, high speed transistors, semiconductor lasers, photodetectors, molecular beam epitaxy, and surface science. He is a fellow of the IEEE, American Physical Society, and a distinguished lecturer of the IEEE Electron Device Society. He received his Ph.D. and master's degrees in electrical engineering at Cornell University, and the bachelor's degree in physics from the National Taiwan University.


Publications

"High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6 um", 15th International Conference on Molecular Beam Epitaxy, Vancouver, BC, Canada, Aug. 3–8, 2008; J. Crystal Growth, 311, 1893–1896 (2009).

Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L., "High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy", Appl. Phys. Lett. 76, 742 (2000).

J. B. Heroux, X. Yang, and W. I. Wang , "GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 �m", Appl. Phys. Lett. 75, 2716 (1999).

X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang, " Molecular beam epitaxial growth of InGaAsNSb/GaAs quantum wells for long-wavelength semiconductor lasers", Appl. Phys. Lett. Vol.75, No.2, 178 (1999).

Y. Zhao, M.J. Jurkovic, and W.I. Wang, "Characterization of AuGe and AuTe based ohmic contacts on InAs n-channel high electron mobility transistors", J. Electrochem. Soc. 14, 1067 (1997).

X. Li, J.L. Jimenez, M.J. Jurkovic, and W.I. Wang, "Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser, in Optoelectronic Integrated Circuits, Proc. SPIE 3006, pp. 126-133 (1997).

I.W. Tao and W.I. Wang, "Strained InGaAs quantum well lasers grown on (111) GaAs", Electron. Lett. 28, 705 (1992).

 

G. Brozak, B.V. Shanabrook, D. Gammon, D.A. Broido, R. Beresford, and W.I. Wang, "Intersubband transitions in piezoelectric superlattices", Surface Science 267, 120-123 (1992). 

E.E. Mendez, H. Ohno, L. Esaki, and W.I.Wang, "Resonant interband tunneling via Landau levels in polytype heterostructures", Phys. Rev. B43, 5196 (1991).

 

Band structure engineering for electron tunneling in heterostructures,                               Beresford, R.; Luo, L.; Wang, W.I.; IEEE Transactions on Electron Devices,                                      v 36, p 2618, Nov. 1989. 

L. F. Luo, R. Beresford, and W. I. Wang, "Interband tunneling in polytype InAs/GaSb/AlSb heterostructures" Appl. Phys. Lett. 55, 2023 (1989).

L. F. Luo, R. Beresford, and W. I. Wang, "Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructures" Appl. Phys. Lett. 53, 2320 (1988).