Wen Wang
Wen Wang
Professor1320 S. W. Mudd, Mail Code: 4712
Phone: +1 212-854-1748
Email:
Office hours: Thursdays 4:00–5:00 p.m.
Professor Wen Wang's current research interests are in the areas of ultrahigh speed electronics, heterogeneous materials integration, and semiconductor optoelectronics, including lasers and photodetectors.
He joined the Electrical Engineering Department in 1987 where he is Thayer Lindsey Professor. Between 1981 and 1982 he worked at the Rockwell Science Center and between 1982 and 1987 he worked at the IBM T. J. Watson Research Center. During Fall 1986, he was a Visiting Associate Professor with the EECS dept at MIT. He has contributed some 250 journal articles in the areas of heterostructure device physics, high speed transistors, semiconductor lasers, photodetectors, molecular beam epitaxy, and surface science. He is a fellow of the IEEE, American Physical Society, and a distinguished lecturer of the IEEE Electron Device Society. He received his Ph.D. and master's degrees in electrical engineering at Cornell University, and the bachelor's degree in physics from the National Taiwan University.
Publications
Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.,
"High electron mobility AlGaN/GaN heterostructures grown on sapphire
substrates by molecular-beam epitaxy", Appl. Phys. Lett. 76, 742 (2000).
J. B. Heroux, X. Yang, and W. I. Wang , "GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 �m", Appl. Phys. Lett. 75, 2716 (1999).
X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang, " Molecular beam epitaxial growth of InGaAsNSb/GaAs quantum wells for long-wavelength semiconductor lasers", Appl. Phys. Lett. Vol.75, No.2, 178 (1999).
Y. Zhao, M.J. Jurkovic, and W.I. Wang, "Characterization of AuGe and AuTe based ohmic contacts on InAs n-channel high electron mobility transistors", J. Electrochem. Soc. 14, 1067 (1997).
X. Li, J.L. Jimenez, M.J. Jurkovic, and W.I. Wang, "Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser, in Optoelectronic Integrated Circuits, Proc. SPIE 3006, pp. 126-133 (1997).
J.L. Jimenez, E.E. Mendez, X. Li, and W.I. Wang, "Resonant tunneling and intrinsic bistability in GaSb-based double barrier heterostructures", Solid State Electron. 40, 583 (1996).
H. Xie, W.I. Wang, and J.R. Meyer, "Infrared electroabsorption modulation at normal incidence in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells", J. Appl. Phys. 76, 92-96 (1994).
"Electron Cyclotron Resonance Hydrogen and Nitrogen Plasma Surface Passivation of AlGaAs/GaAs heterojunction bipolar transistors," with Q.Wang, E.S.Yang, P.W.Li, Z.Lu and R.M.Osgood, IEEE Electron Dev. Lett. 13, 83-85 (1992).
K.F. Longenbach, R. Beresford, and W.I. Wang, "Applications of dual-gate and split-gate field-effect transistor designs to InAs field-effect transistors", Solid State Electronics, 33, 1211-1233 (1990).
R. Beresford, L.F. Luo, K.F. Longenbach, and W.I. Wang, "Resonant interband tunneling through a 110 nm InAs quantum well", Appl. Phys. Lett. 56, 551 (1990).
J. B. Heroux, X. Yang, and W. I. Wang , "GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 �m", Appl. Phys. Lett. 75, 2716 (1999).
X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang, " Molecular beam epitaxial growth of InGaAsNSb/GaAs quantum wells for long-wavelength semiconductor lasers", Appl. Phys. Lett. Vol.75, No.2, 178 (1999).
Y. Zhao, M.J. Jurkovic, and W.I. Wang, "Characterization of AuGe and AuTe based ohmic contacts on InAs n-channel high electron mobility transistors", J. Electrochem. Soc. 14, 1067 (1997).
X. Li, J.L. Jimenez, M.J. Jurkovic, and W.I. Wang, "Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser, in Optoelectronic Integrated Circuits, Proc. SPIE 3006, pp. 126-133 (1997).
J.L. Jimenez, E.E. Mendez, X. Li, and W.I. Wang, "Resonant tunneling and intrinsic bistability in GaSb-based double barrier heterostructures", Solid State Electron. 40, 583 (1996).
H. Xie, W.I. Wang, and J.R. Meyer, "Infrared electroabsorption modulation at normal incidence in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells", J. Appl. Phys. 76, 92-96 (1994).
"Electron Cyclotron Resonance Hydrogen and Nitrogen Plasma Surface Passivation of AlGaAs/GaAs heterojunction bipolar transistors," with Q.Wang, E.S.Yang, P.W.Li, Z.Lu and R.M.Osgood, IEEE Electron Dev. Lett. 13, 83-85 (1992).
K.F. Longenbach, R. Beresford, and W.I. Wang, "Applications of dual-gate and split-gate field-effect transistor designs to InAs field-effect transistors", Solid State Electronics, 33, 1211-1233 (1990).
R. Beresford, L.F. Luo, K.F. Longenbach, and W.I. Wang, "Resonant interband tunneling through a 110 nm InAs quantum well", Appl. Phys. Lett. 56, 551 (1990).